Electrical conductivity of a semiconductor

1. The problem statement, all variables and given/known data

Estimate the electrical conductivity, at 135°C, of silicon that has been doped with 3 x 1024 per meter cubed of aluminum atoms. Assume values for electron and hole mobilities of 0.03 and 0.007 m2/V-s, respectively.

2. Relevant equations

σ=|e|(nee+nhh)

σ=conductivity
e=1.6*10-19
ne=number of free electrons
μe=electron mobility
nh=number of holes
μh=hole mobility

3. The attempt at a solution

So far I have this:
σ=1.6*10-19*(ne*0.03+3*1024*0.007)

I don’t know how to find ne. Is it the same value of nh?

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